收藏本站
Ordering number : EN8283A
2SK3746
N-Channel Power MOSFET
1500V, 2A, 13 Ω , TO-3P-3L
Features
http://onsemi.com
?
?
?
Low ON-resistance, low input capacitance, ultrahigh-speed switching
High reliability (Adoption of HVP process)
Avalanche resistance guarantee
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
1500
±20
2
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
IDP
PD
Tch
Tstg
EAS
IAV
PW ≤ 10 μ s, duty cycle ≤ 1%
Tc=25 ° C
4
2.5
110
150
--55 to +150
41
2
A
W
W
° C
° C
mJ
A
* 1 VDD=50V, L=20mH, IAV=2A (Fig.1)
* 2 L ≤ 20mH, single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7539-002
Product & Package Information
? Package : TO-3P-3L
? JEITA, JEDEC : SC-65, TO-247, SOT-199
? Minimum Packing Quantity : 30 pcs./magazine
15.6
4.8
1.5
3.2
2SK3746-1E
7.0
Marking
Electrical Connection
2
K3746
13.6
LOT No.
1
2.0
3.0
1.0
0.6
3
1
5.45
2
3
5.45
1 : Gate
2 : Drain
3 : Source
TO-3P-3L
Semiconductor Components Industries, LLC, 2013
July, 2013
53012 TKIM TC-00002762/62005QB MSIM TB-00001345 No.8283-1/7
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
2SK3748 MOSFET N-CH 1500V 4A TO-3PML
2SK3793-AZ MOSFET N-CH 100V MP-45F/TO-220
2SK3811-ZP-E1-AY MOSFET N-CH 40V MP-25ZP/TO-263
2SK3812-ZP-E1-AY MOSFET N-CH 60V MP-25ZP/TO-263
2SK3813-AZ MOSFET N-CH 40V MP-3/TO-251
2SK3814-AZ MOSFET N-CH 60V MP-3/TO-251
2SK3943-ZP-E1-AY MOSFET N-CH 40V MP-25ZP/TO-263
2SK3984-ZK-E1-AY MOSFET N-CH 100V 18A TO-252
相关代理商/技术参数
2SK3746 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N TO-3PB
2SK3746-1E 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
2SK3747 功能描述:MOSFET HIGH-VOLTAGE POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
2SK3747 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N TO-3PML
2SK3747-1E 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
2SK3747-1EX 制造商:ON Semiconductor 功能描述:NCH 10V DRIVE SERIES
2SK3747-MG8 功能描述:MOSFET HIGH-VOLTAGE POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
2SK3748 功能描述:MOSFET HIGH-VOLTAGE POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube